成果归属作者：

邢杰

成果归属机构：

数理学院

作者：

Yehua Yang a,b, Jie Xing a,* , Yifan Ji a, Xu Han c, Jinhui Liu d, Pengyu Liu a, Zhongshan Zhang e, Furong Qu f,g, Jiahao Yan c , Shuaiqiang Ming f,g, Zhejia Wang g, Zihao Guo c, Runhua Zhang a, Zijian Li a, Meng He f,g, Guangdong Huang a, Yang Xia f,g, Haochong Huang a, Yuan Huang c,*, Kong Liu b,*

单位：

a School of Science, China University of Geosciences, Beijing 100083, China b Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China c School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China d Department of Microelectronics, Delft University of Technology, Delft 2628CD, Netherlands e Huairou Division, Institute of Physics, Chinese Academy of Sciences, Beijing 100876, China f Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100049, China g Jiaxing Kemin Electronic Equipment Technology Co. Ltg., Jiaxing 314050, China

关键词：

Ferroelectric synaptic transistor Two dimensional materials Hf0.5Zr0.5O2 Neuromorphic computing

语种：

英文

来源：

Applied surface science,2026(715):164546.

出版日期：

2025-09-08

提交日期：

2025-12-29

引用参考：

Yehua Yang a,b, Jie Xing a,* , Yifan Ji a, Xu Han c, Jinhui Liu d, Pengyu Liu a, Zhongshan Zhang e, Furong Qu f,g, Jiahao Yan c , Shuaiqiang Ming f,g, Zhejia Wang g, Zihao Guo c, Runhua Zhang a, Zijian Li a, Meng He f,g, Guangdong Huang a, Yang Xia f,g, Haochong Huang a, Yuan Huang c,*, Kong Liu b,*. High-performance reconfigurable synaptic transistor enabled by coupled interface and ferroelectricity based on SnS2/dual-Al2O3/Hf0.5Zr0.5O2[J]. Applied surface science,2026(715):164546.

全文附件授权许可：

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